Ultra-low Power Voltage Reference in 40 nm (VVR060LT040) |
参考报价 |
无资料 |
无资料 |
40 nm |
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Voltage Reference for Integrated PMU (Silicon-proven 40 nm, low-power for IoT with quiescent current of <0.9 μA)
This series of fully-integrated low power voltage references generates a 0.6 V output voltage and supports an input from 2.8 to 4.2 V. They operate at an ultra-low quiescent current of < 0.9 μA. These voltage references are silicon-proven in a 40 nm process and are a part of our 40 nm integrated power management unit (PMU) IP core series that has been optimized for integration into Application Specific Integrated Circuits (ASICs) or Systems-on-a-Chip (SoCs), including radio frequency (RF), wireless, and narrowband Internet of Things (NB-IoT) applications.
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概述 |
3 mA Capless LDO in 40 nm (VLDS0003LNT040) |
参考报价 |
无资料 |
无资料 |
40 nm |
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Power Quencher® Capless LDO (Silicon-proven 40 nm, 3 mA, excellent quiescent current for IoT)
This series of low-power, fully-integrated low dropout (LDO) voltage regulators achieves a low-noise output voltage without external components, thus saving package pins and valuable PC board space. These LDOs are silicon-proven in a 40 nm process and are a part of our 40 nm integrated power management unit (PMU) IP core series that has been optimized for integration into Application Specific Integrated Circuits (ASICs) or Systems-on-a-Chip (SoCs), including radio frequency (RF), wireless, and narrowband Internet of Things (NB-IoT) applications.
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概述 |
High-Accuracy Bandgap Reference in 40 nm (VBR120T040) |
参考报价 |
无资料 |
无资料 |
40 nm |
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Bandgap Reference for Integrated PMU (Silicon-proven 40 nm, high-accuracy of < ±1%)
This series of fully-integrated high-accuracy bandgap voltage references generates a 1.2 V output voltage and supports an input from 2.8 to 4.2 V. They provide an output voltage accuracy of < ±1%. These bandgap references are silicon-proven in a 40 nm process and are a part of our 40 nm integrated power management unit (PMU) IP core series that has been optimized for integration into Application Specific Integrated Circuits (ASICs) or Systems-on-a-Chip (SoCs), including radio frequency (RF), wireless, and narrowband Internet of Things (NB-IoT) applications.
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概述 |
Flexsupply™ Switching Converter in 40 nm (VRDS00XXT040) |
参考报价 |
无资料 |
无资料 |
40 nm |
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Flexsupply™ Switching Converter (Silicon-proven 40 nm, allows products to work at ultra-low battery levels, no external components needed)
Flexsupply™ Buck/Boost DC-DC Converters: This series of buck/boost switched capacitor regulated voltage doubler IP cores allows operation across a wide range of battery voltage levels, without external components. With their low power consumption and integrated, modular design, this series of IP cores supports a broad range of industry applications with improved efficiency and flexibility.
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概述 |
140 mA Buck DC-DC Converter in 40 nm (VBKS0140T040) |
参考报价 |
无资料 |
无资料 |
40 nm |
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Buck DC-DC Converter for Integrated PMU (Silicon-proven 40 nm, 140 mA, optimized clocking to eliminate spurious emissions for low system noise)
This series of buck DC-DC converters delivers up to 140 mA of load current and features optimized clocking options to eliminate spurious emissions resulting in much lower system noise. This buck DC-DC converter is silicon-proven in a 40 nm process and is a part of our 40 nm integrated power management unit (PMU) IP core series that has been optimized for integration into Application Specific Integrated Circuits (ASICs) or Systems-on-a-Chip (SoCs), including radio frequency (RF), wireless, and narrowband Internet of Things (NB-IoT) applications.
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概述 |
WiFi Frequency Synthesizer IP In 2.4GHz Band |
100000 点 |
200.000 K μm^2 |
3.2 GHz |
55 nm |
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The frequency synthesizer uses a single 1.25V power supply. Good noise immunity allows this IP to be integrated in a noisy SOC environment. The synthesizer operates at 1.5X WiFi 2.4GHz band for wireless application.
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概述 |
Rapid IO PHY in 65nm |
参考报价 |
2.295 μm^2 |
25 Hz |
65 nm |
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The IP is designed for chips that perform high bandwidth data communication while operating at low power consumption. It can also be used in any serial interface where timing and electrical specification can be satisfied.
This IP has four individual Transmitter (TX) and Receiver (RX) channels, and one common phase lock loop (PLL).
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概述 |
Dual-Channel 12-bit 80 MSPS ADC IP in UMC 65 nm |
参考报价 |
450.000 μm^2 |
0.8 MHz |
65 nm |
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ADC X is an ultra-compact and very low power analog-to-digital converter (ADC) IP. The 12-bit 80 MSPS Dual ADC includes an internal custom bandgap voltage reference. It is capable of supplying bias currents to other parallel ADCs. IP architecture is robust and can be ported to other
65 nm processes.The ADC uses fully differential pipeline architecture with custom low-disturbance digital correction technique which allows single supply bus for both digital and analog.
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概述 |
10-bit 300 MSPS Video DAC IP in 90 nm |
60000 点 |
76.000 K μm^2 |
300 MHz |
90 nm |
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The UIP_DAC10-300M_205370 is a 10-bit DAC designed in low power TSMC 90 nm logic process. It consists of a current steering DAC. The DAC uses a fully differential architecture. The input data of the DAC is in 1.2V, in unsigned format.
A 3.3V supply is used for the analog portion of the IP. This high performance DAC is designed for CVBS standard or RGB Video signal bandwidth. The IP consumes only 41 mA at 300 MSPS operation and utilizes a silicon area of only 0.076 mm2. The IP does not require any external decoupling and is ideal for integration in mixed-signal systems.
The DAC output current is 6-bit programmable. The IP architecture is robust and can be ported to other 90 nm processes.
APPLICATIONS
Composite Video (CVBS)
HDTV
RGB Video
DAC Output Model
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概述 |
Triple 10-bit 330 MSPS Video DAC IP in TSMC 90 nm |
参考报价 |
330.000 μm^2 |
330 MHz |
90 nm |
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is a 10-bit Triple DAC designed in TSMC 90 nm logic process. It consists of a current steering DAC. The DAC uses a fully differential architecture. The input data of the DAC is in 1.2 V, in unsigned format.
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概述 |