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| PLL 1600M UMC 28 nm logic and Mixed-Mode HPC process | 参考报价 | 270.000 μm^2 | 1.6 GHz | 28 nm |  |
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| A Phase-Locked Loop (PLL) with an operating frequency ranging from 200 MHz to 1600 MHz. This PLL is designed with the UMC 28 nm logic and Mixed-Mode HPC process. It can be integrated into a chip to generate a high-speed clock. The embedded divide-by-4 loop divider allows users to boost the output frequency of up to 1600 MHz. | 概述 | |||||
| PLL 2000M UMC 28 nm logic and Mixed-Mode HPC process | 参考报价 | 230.000 μm^2 | 2 GHz | 28 nm | |
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| A Phase-Locked Loop (PLL) circuit used to generate the high-speed clock with an operating frequency up to 2000 MHz. This PLL is designed by using the UMC 28 nm logic and Mixed-Mode HPC process. It can be integrated into a chip to generate an accurate clock. | 概述 | |||||
| PLL 1300M UMC 28 nm logic and Mixed-Mode HPC process | 参考报价 | 109.850 K μm^2 | 50 MHz | 28 nm | |
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| It is used to generate a stable, high-speed clock from an external slower clock signal. It integrates one Voltage-Controlled Oscillator (VCO), one Phase-Frequency Detector (PFD), one Low-Pass Filter (LPF), one 8-bit programmable divider, and other associated support circuitries. This PLL supports an operating voltage ranging from 0.81 V to 0.99 V with an operating junction temperature ranging between -40 °C and 125 °C. This IP uses the input operating frequency of PFD ranging from 6 MHz to 25 MHz and generates the output frequency ranging from 25 MHz to 1300 MHz. The jitter performance of a PLL is highly dependent on the floor plan of ASIC. Because PLL is a sensitive cell when integrated into an ASIC design, the best way to maximize its capacity is to keep PLL away from the noisy blocks in the core region, such as the memory block and the high-driving logic circuit, and the I/O region, such as the high-driving I/O. This PLL must be placed around the I/O area. Providing sufficient space between this PLL and the noisy blocks is a simple and effective approach to reduce the coupled substrate noise. | 概述 | |||||
| PLL 3000M UMC 28 nm logic and Mixed-Mode HPC process | 参考报价 | 92.400 K μm^2 | 27 MHz | 28 nm | |
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| It generates a stable high-speed clock from an external slower reference clock signal. It integrates a Voltage-Controlled Oscillator (VCO), a Phase-Frequency Detector (PFD), a Low-Pass Filter (LPF), a 9-bit programmable loop divider, a 2-bit programmable pre-divider and associated support circuitry. This PLL is designed by using the UMC 28 nm logic and Mixed-Mode HPC process, and it supports an operating voltage ranging from 0.81 V to 0.99 V with an operating junction temperature ranging between -40 °C and 125 °C. It accepts FREF frequency ranging from 6 MHz to 27 MHz and generates the output frequency up to 3000 MHz. | 概述 | |||||
| Low power oscillator | 12000 点 | 100.100 μm^2 | 32 KHz | 40 nm | |
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| OSC32K is designed for 40nm advance process with 1.2v to 3.3v wide power(VDD) range. | 概述 | |||||
| USB2.0 OTG PHY in 40 nm | 80000 点 | 257.556 K μm^2 | 30.6 MHz | 40 nm | |
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| The IP is an UTMI+ Level 3 compatible USB2.0 OTG function transceiver IP. It is comprised of both USB1.1 and USB2.0 transceivers; itis comprised of digital logic needed to convert USB serial data to 8 or 16 bit parallel data for high speed and full speed. It is also support full speed and low speed serial mode. | 概述 | |||||
| BRAINS | 50000 点 | 5.250 K Gates | 1.2 GHz | 40 nm | |
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| With improvement of technology node and IC design is geting more complex, the ratio of embedded memory in SoCs have been exceeding 50%. The fault types of memory are getting complex. The Memory BIST (Built-In Self-Test) is generated for efficient controlling IC cost. The traditional BIST method is inserted along with single memory. If there are many memories in SoCs, the area and testing time of SoCs are expanded a lot due to insertion of BIST. Therefore the SoCs' cost will increase rapidly because memory testing time is too long. We devoted in developing SRAM testing solutions for a long time. BRAINS is based on memory testing patents to reduce testing time and increase yield rate. In addition, BRAINS has many unique features to increase SoCs' reliability and stability. | 概述 | |||||
| HEART(High Efficient Accumulative Repairing Technical) | 50000 点 | 5.250 K Gates | 2.2 GHz | 40 nm | |
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| HEART can efficient repair faulty SRAM after using BRAINS. SoCs can mantain correctness of functions and avoid fatal error of system reault in SRAM's defect through SRAM's repairing technical. HEART is SRAM accumulative repairing technical, and it combines advantages of Soft-repair and Hard-repair. HEART supports internal registers of SoCs and external storages of SoCs to record SRAM's faulty information. Once SoCs have new SRAM's defect after using them for a long time, users can repeated repair SRAM's defect through HEART. In addtion, HEART also support "On-Demad" testing and repairing requirement. It means that users can enable system registers of SoCs or signal of HEART to test and repair SRAM at one when SoCs have fatal error situations. | 概述 | |||||
| NVM test and repair | 60000 点 | 5.250 K Gates | 2.2 GHz | 40 nm | |
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| HEART (High Efficient Accumulative Repairing Technical) is a built-in self-repair (BISR) mechanism which uses to recover errors detected after memory testing and to improve yield rate. This mechanism is implemented with spare memories and a built-in redundancy analyze (BIRA) logics which is designed to allocate the redundancy. It needs a storable device (eFuse, OTP or registers) to store testing results after analysis. We provides an efficient accumulative repairing solution to combine advantages of soft BISR mechanism and hard BISR mechanism for improving yield rate. | 概述 | |||||
| USB2.0 UTMI Device PHY(non-oscillator) | 100000 点 | 280.000 K μm^2 | 30.6 MHz | 40 nm | |
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| The USB PHY is an UTMI compatible USB2.0 device PHY IP which does not require external oscillator reference. It is comprised of both USB1.1 and USB2.0 transceivers and it is also comprised of digital logic needed to convert USB serial data to 8 or 16 bit parallel data. | 概述 | |||||
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